dmp4015sk3q document number: ds36665 rev. 12- 2 1 of 7 www.diodes.com december 2013 ? diodes incorporated dmp4015sk3q p-channel enhancem ent mode mosfet product summary v (br)dss r ds(on) max i d t c = +25c -40v 11m ? @ v gs = -10v -35a 15m ? @ v gs = -4.5v -30a description this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? dc-dc converters ? power management functions ? backlighting features and benefits ? 100% unclamped inductive switch (uis) test in production ? low on-resistance ? fast switching speed ? lead-free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? ? qualified to aec-q101 standards for high reliability ? ppap available mechanical data ? case: to252 (dpak) ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? matte tin finish annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.33 grams (approximate) ordering information (note 4 & 5) part number compliance case packaging dmp4015sk3q-13 automotive to252 2,500/tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defin ed as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and are ppap capable. automotive, aec-q101 and standard products are electrically and thermally the same, except where specified. for more information, please refer to http://www. diodes.com/quality/product_compliance_de finitions/. 5. for packaging details, go to our websit e at http://www.diodes.com/p roducts/packages.html. marking information equivalent circuit gs d d top view pin-out top view to252 ? green e3 yyww p4015s . = manufacturer?s marking p4015s = product type marking code yyww = date code marking yy = year (ex: 13 = 2013) ww = week (01 - 53)
dmp4015sk3q document number: ds36665 rev. 12- 2 2 of 7 www.diodes.com december 2013 ? diodes incorporated dmp4015sk3q maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -40 v gate-source voltage v gss 25 v continuous drain current (note 6) v gs = -10v steady state t c = +25c t c = +70c i d -35 -27 a continuous drain current (note 6) v gs = -10v steady state t a = +25c t a = +70c i d -14 -11 a t<10s t a = +25c t a = +70c i d -22 -18 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm -100 a maximum body diode forward current (note 6) i s -5.5 a avalanche current (note 7) i as -57 a avalanche energy (note 7) e as 162 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 6) t a = +25c p d 3.5 w t a = +70c 2.2 thermal resistance, junction to ambient (note 6) steady state r ja 36 c/w t<10s 15 thermal resistance, junction to case (note 6) steady state r jc 4.5 operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss -40 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current i dss ? ? -1 a v ds = -40v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 25v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs ( th ) -1.5 -2 -2.5 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds(on) ? 7 11 ? v gs = -10v, i d = -9.8a ? 9 15 v gs = -4.5v, i d = -9.8a forward transfer admittance |y fs | ? 26 ? s v ds = -20v, i d = -9.8a diode forward voltage v sd ? -0.7 -1 v v gs = 0v, i s = -1a dynamic characteristics (note 9) input capacitance c iss ? 4234 ? pf v ds = -20v, v gs = 0v f = 1mhz output capacitance c oss ? 1036 ? reverse transfer capacitance c rss ? 526 ? gate resistance r g ? 7.77 ? ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g ? 47.5 ? nc v ds = -20v, v gs = -5v i d = -9.8a gate-source charge q g s ? 14.2 ? gate-drain charge q g d ? 13.5 ? turn-on delay time t d ( on ) ? 13.2 ? ns v gs = -10v, v dd = -20v, r g = 6 ? , i d = -1a turn-on rise time t r ? 10 ? turn-off delay time t d ( off ) ? 302.7 ? turn-off fall time t f ? 137.9 ? notes: 6. device mounted on fr-4 substrate pc board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. uis in production with l = 0.1mh, t j = +25c. 8 .short duration pulse test used to minimize self-heating effect. 9. guaranteed by design. not subject to production testing.
dmp4015sk3q document number: ds36665 rev. 12- 2 3 of 7 www.diodes.com december 2013 ? diodes incorporated dmp4015sk3q -v , drain -source voltage(v) fig. 1 typical output characteristics ds -i , d r ain c u r r en t (a) d 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 -v = 10v gs -v = 4.5v gs -v = 4.0v gs -v = 3.5v gs -v = 3.0v gs -i , drain current (a) d 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 20 25 30 -v , gate-source voltage (v) gs fig. 2 typical transfer characteristics -i , drain source current fig. 3 typical on-resistance vs. drain current and gate voltage d r,drain-s o urce o n-resistance( ) ds(on) 0 0.005 0.01 0.015 0.02 0 5 10 15 20 25 30 -i , drain source current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , drain-s o urce o n-resistance( ) ds(on) 0 0.005 0.01 0.015 0.02 0 5 10 15 20 25 30 -v = 4.5v gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 5 on-resistance variation with temperature r , drain-source on-resistance (normalized) ds(on) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 6 on-resistance variation with temperature r , d r ain-s o u r c e o n- r esistan c e ( ) ds(on) -v = 10v -i = 10a gs d -v = 4.5v -i = 5.0a gs d 0 0.004 0.008 0.012 0.016 0.020
dmp4015sk3q document number: ds36665 rev. 12- 2 4 of 7 www.diodes.com december 2013 ? diodes incorporated dmp4015sk3q -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 7 gate threshold variation vs. ambient temperature a -v , gate threshold voltage (v) gs(th) 0 0.4 0.8 1.2 1.6 2 2.4 -i , source current (a) s -v , source-drain voltage (v) fig. 8 diode forward voltage vs. current sd 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 20 25 30 v , drain-source voltage (v) fig. 9 typical junction capacitance ds c , j u n c t i o n c a p a c i t an c e (p f ) t c iss c oss c rss 10 100 1000 0 5 10 15 20 25 30 f = 1mhz -v , drain-source voltage(v) fig. 10 typical drain-source leakage current vs. voltage ds -i , leaka g e c u r r e n t (na) dss 0.1 1 10 100 1000 10000 0 5 10 15 20 25 30 t =150c a t =125c a t =85c a t =25c a 0 2 4 6 8 10 q , total gate charge (nc) fig. 11 gate-charge characteristics g v , gate-source voltage (v) gs 020406080100120 0 10 20 30 40 50 60 70 80 90 100 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) fig. 12 single pulse maximum power dissipation p , p eak t r a n sie n t p o we r (w) (pk) single pulse r = 72c/w ja r (t) = r(t) * r = p * r ? ja ja ja ja t - t
dmp4015sk3q document number: ds36665 rev. 12- 2 5 of 7 www.diodes.com december 2013 ? diodes incorporated dmp4015sk3q 0.2 0.4 0.6 0.8 1.0 inductor (mh) fig. 13 single-pulse avalanche tested 0 10 20 30 40 50 60 70 80 90 i, avalan c he c u r r ent (a) as 0 100 200 300 400 500 600 e , avala n c h e e n e r g y (mj) as e as i as 0.1 0.3 0.5 0.7 0.9 starting temperature (t ) = 25c j 0.1 1 10 100 -v , drain-source voltage (v) fig. 14 soa, safe operation area ds 0.01 0.1 1 10 100 -i , d r ain c u r r en t (a) d r limited ds(on) t = 150c t = 25c j(max) a v = -10v single pulse gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w 0.001 0.01 0.1 1 10 100 1,000 10,000 t1, pulse duration times (sec) fig. 15 transient thermal resistance 0.001 0.01 0.1 r(t), t r ansien t t h e r mal r esis t an c e 1 r (t) = r(t) * r r = 72c/w duty cycle, d = t1/ t2 ? ja ja ja d = 0.9 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.50 d = 0.02 d = 0.01 d = 0.005 d = single pulse
dmp4015sk3q document number: ds36665 rev. 12- 2 6 of 7 www.diodes.com december 2013 ? diodes incorporated dmp4015sk3q package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. to252 dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 ? ? e ? ? 2.286 e 6.45 6.70 6.58 e1 4.32 ? ? h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 ? all dimensions in mm dimensions value (in mm) z 11.6 x1 1.5 x2 7.0 y1 2.5 y2 7.0 c 6.9 e1 2.3 b3 e 2x b2 d l4 a c2 e a1 l l3 3x b a h a2 e1 x2 c z x1 y1 e1 y2
dmp4015sk3q document number: ds36665 rev. 12- 2 7 of 7 www.diodes.com december 2013 ? diodes incorporated dmp4015sk3q important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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